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| TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102 Notebook PC Applications Portable Equipment Applications * * * * Low drain-source ON resistance: RDS (ON) = 24 m (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200 A) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating -20 -20 8 -6 -24 2.5 0.7 5.9 -3 0.25 150 -55~150 Unit V V V A W W mJ A mJ C C Pulsed (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Drain power dissipation Drain power dissipation JEDEC JEITA TOSHIBA 2-3U1A Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range Weight: 0.011 g (typ.) Circuit Configuration 8 7 6 5 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 50.0 178.6 Unit C/W C/W 1 2 3 4 Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 TPCF8102 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd |Yfs| Ciss Crss Coss tr VGS ton 0V -5 V 4.7 ID = -3.0 A VOUT RL = 3.33 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 8 V, VDS = 0 V VDS = -20 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 8 V VDS = -10 V, ID = -200 A VGS = -1.8 V, ID = -1.5 A VGS = -2.5 V, ID = -3.0 A VGS = -4.5 V, ID = -3.0 A VDS = -10 V, ID = -3.0 A Min -20 -12 -0.5 7 VDD -16 V, VGS = -5 V, - ID = -6.0 A Typ. 67 36 24 14 1550 215 265 7 13 21 68 19 14 5 Max 10 -10 -1.2 90 41 30 ns nC pF S m Unit A A V V VDD -10 V - Duty < 1%, tw = 10 s = Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -6.0 A, VGS = 0 V Min Typ. Max -24 1.2 Unit A V Forward voltage (diode) 2 2004-07-06 TPCF8102 Marking (Note 5) Lot code (month) Lot No. Part No. (or abbreviation code) F3B Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Pin #1 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 Unit: (mm) FR-4 25.4 x 25.4 x 0.8 Unit: (mm) (a) (b) Note 3: VDD = -16 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = -3.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: A dot on the lower left of the marking indicates Pin 1. 3 2004-07-06 TPCF8102 ID - VDS -5 -5 -4.5 -4 -3 -1.6 -2.5 -1.9 -2 -3 -8 -1.8 -10 -1.7 -2.5 -3 -4 -5 -6 -2 ID - VDS Common source Ta = 25C Pulse test -1.9 -1.8 -4 (A) ID ID (A) Drain current -2 Drain current -1.7 -4 -1.6 -1.5 VGS = -1.4 V 0 0 -1.5 -1 VGS = -1.4 V Common source Ta = 25C Pulse test -0.2 -0.4 -0.6 -0.8 -1.0 -2 0 0 -1 -2 -3 -4 -5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -10 Common source -0.5 VDS = -10 V Pulse test VDS - VGS Common source Ta = 25C Pulse test -8 (V) VDS Drain-source voltage Ta = 25C Ta = -55C Ta = 100C -0.4 ID (A) -6 -0.3 Drain current -4 -0.2 ID = -6 A -0.1 -3 A -1.5 A -2 -4 -6 -8 -10 -2 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 0 0 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 Common source VDS = -10 V Pulse test Ta = 25C 10 Ta = 100C Ta = -55C 1000 Common source Ta = 25C Pulse test RDS (ON) - ID |Yfs| (S) Drain-source on resistance RDS (ON) (m) Forward transfer admittance 100 -1.8 V -2.5 V VGS = -4.5 V 10 1 0.1 -0.1 -1 -10 -100 1 -0.1 -1 -10 -100 Drain current ID (A) Drain current ID (A) 4 2004-07-06 TPCF8102 RDS (ON) - Ta 160 Common source -100 Common source Ta = 25C Pulse test IDR - VDS 120 Drain reverse current IDR (A) Pulse test Drain-source on resistance RDS (ON) (m) 80 VGS = -1.8 V -2.5 A ID = -1.5 A -6 A ID = -1.5, -2.5 A ID = -1.5, -2.5, -6 A -10 -2.0 V -4 V -1.8 V -1 V 40 -2.5 V -4.5 V 0 -80 -40 0 40 VGS = 0 V 160 -1 0 0.4 0.8 1.2 1.6 2 80 120 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 VGS = 0 V f = 1 MHz Ta = 25C Ciss 2.0 Common source VDS = -10 V ID = -200 A Pulse test Vth - Ta Vth (V) Gate threshold voltage 1.5 (pF) C 1000 Capacitance Coss Crss 1.0 100 0.5 0 -80 10 0.1 1.0 10 100 -40 0 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) PD - Ta 3 (1) t = 5 s (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) -20 Dynamic input/output characteristics Common source ID = -6 A Ta = 25C Pulse test -12 VGS -4 V VDD = -16 V -4 -8 V -4 -12 -20 (W) (V) -16 VDS -16 2 Drain power dissipation Drain-source voltage 1.5 (1) DC 1 (2) t = 5 s 0.5 (2) DC -8 -8 0 0 40 80 120 160 0 0 8 16 24 32 0 40 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2004-07-06 Gate-source voltage VGS (V) 2.5 PD VDS TPCF8102 rth - tw 1000 Device mounted on a glass-epoxy board (b) (Note 2b) (C/W) Transient thermal impedance rth 100 Device mounted on a glass-epoxy board (a) (Note 2a) 10 1 0.1 1m 10 m 100 m 1 10 100 1000 Pulse width tw (s) Safe operating area -100 ID max (pulsed)* (A) 1 ms* -10 10 ms* Drain current ID -1 *: Single pulse Ta = 25C Curves must be derated linearly with increase in temperature -0.1 -0.1 VDSS max -1 -10 -100 Drain-source voltage VDS (V) 6 2004-07-06 TPCF8102 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2004-07-06 |
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